Semiconductor Device Fabrication Technology , 2nd semester. MSc Electronics Detailed Syllabus under Gauhati University
A) Semiconductor
Device Fabrication Technology
(30marks)
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Unit-1
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Thin Film: Basic definitions- thin and
thick films, properties of thin films, thin film deposition methods- PVD, CVD, Epitaxy theory of nucleation and growth in thin films; VPE, LPE, MOCVD, MBE techniques Growth of multilayer structure, defects; diffusion, method of control and measurement of film thickness, structure, optical, electrical and mechanical characterization of thin films metallic, semi conducting and insulating films; non crystalline films; various applications of thin films. (10 marks) |
Unit-2
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IC Processing: Introduction to I.C s –
Definition, scale of
integration, types-monolithic, hybrid, thick & thin films; capacitance & resistance formation in ICs , idea of fabrication (silicon planar technology) . Fabrication of diode, BJT, FET & MOSFET in ICs; Bulk semiconductor growth: zone refining technique Czochralski growth, vertical and horizontal Bridgman technique. Wafer preparation, oxidation, diffusion, ion implantation, metallization, pattern definition, encapsulation, lithography: advanced processing technique, electron beam lithography, soft x-ray lithography various types of etching plasma etching (10 marks) |
Unit -3
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Fundamentals
of low dimensional semiconductor structures:
Moore’s
law: Transition from microelectronics to nanoelectronics, low dimensional semiconductor structures-quantum well, quantum wire, quantum dots, electron transport in nanostructures, metal nanoparticles. Synthesis & characterization of nanomaterials: Template-based synthesis, Lithographic techniques, Nonlithographic techniques. Chemical Characterization & Structural Characterization. Carbon Nanotubes (CNTs) & Graphene, application of nanomaterial (10 marks) |