Semiconductor Device Fabrication Technology , 2nd semester. MSc Electronics Detailed Syllabus under Gauhati University
A) Semiconductor
Device Fabrication Technology
(30marks)
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Unit-1
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Thin Film: Basic definitions- thin and
thick films, properties of thin films, thin film deposition methods- PVD, CVD, Epitaxy theory of nucleation and growth in thin films; VPE, LPE, MOCVD, MBE techniques Growth of multilayer structure, defects; diffusion, method of control and measurement of film thickness, structure, optical, electrical and mechanical characterization of thin films metallic, semi conducting and insulating films; non crystalline films; various applications of thin films. (10 marks) |
Unit-2
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IC Processing: Introduction to I.C s –
Definition, scale of
integration, types-monolithic, hybrid, thick & thin films; capacitance & resistance formation in ICs , idea of fabrication (silicon planar technology) . Fabrication of diode, BJT, FET & MOSFET in ICs; Bulk semiconductor growth: zone refining technique Czochralski growth, vertical and horizontal Bridgman technique. Wafer preparation, oxidation, diffusion, ion implantation, metallization, pattern definition, encapsulation, lithography: advanced processing technique, electron beam lithography, soft x-ray lithography various types of etching plasma etching (10 marks) |
Unit -3
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Fundamentals
of low dimensional semiconductor structures:
Moore’s
law: Transition from microelectronics to nanoelectronics,
low dimensional semiconductor structures-quantum well, quantum wire, quantum dots, electron transport in nanostructures, metal nanoparticles. Synthesis & characterization of nanomaterials: Template-based synthesis, Lithographic techniques, Nonlithographic techniques. Chemical Characterization & Structural Characterization. Carbon Nanotubes (CNTs) & Graphene, application of nanomaterial (10 marks) |
B) Linear Electronic Circuits (70 marks)
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Unit
-1
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Diode circuits: Review of pn diode junction
operation, diode
testing with multimeter, diode specifications; diode biasing, load line analysis, series and parallel connection of diodes, rectifier circuits & zener diode based voltage regulator, clipper and clamper circuits, voltage multiplier circuits; Logic gates design with diodes (10 marks). |
Unit
-2
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BJT circuits: Review of BJT operation and,
BJT testing with
multimeter, BJT specifications; BJT biasing techniques, Q-point and stability factor; BJT modeling: re -model, h-parameter model, hybrid p-model; small signal analysis of BJT amplifiers at low and high frequencies – determination of input impedance, voltage gain, current gain and output impedance of BJT amplifiers in CE, CB and CC configurations; Darlington pair and feedback pair BJT amplifiers; multistage BJT amplifiers, tune amplifiers. Switching circuits and logic gate design with BJT (10 marks). |
Unit-3
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JFET and MOSFET circuits: Review of JFET &
MOSFET operation, device specifications; JFET & MOSFET biasing techniques and biasing techniques; Transconductance model of JFET and MOSFET; small signal analysis of JFET & MOSFET amplifiers at low and high frequencies – determination of input impedance, voltage gain, current gain and output impedance of the amplifiers in CS, CG and CD configurations; multistage JFET & MOSFET amplifiers. Basics of switching circuits design with JFET and MOSFET (10 marks). |
Unit-4
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Frequency response of
amplifiers: Amplifier
gain in Decibels,
frequency response plots – magnitude response and phase response, -3dB amplifier bandwidth determination from Bode plots, gain-band width product, square wave testing of amplifiers; comparison between performance of BJT, JFET and MOSFET amplifiers at high frequencies; gain cross over and phase crossover frequency, transfer function of amplifier – location of poles and zeros, stability criterion (10 marks). |
Unit-5
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Power amplifiers: Classification of power
amplifiers; design
and analysis of class A, B, AB, C amplifiers – determination of conversion efficiency, signal distortions in power amplifier; heat sink requirement and power transistor specifications; Qualitative study of class D, E & F amplifiers. Case study of commercially available power amplifier ICs for audio and RF applications (10 marks). |
Unit-6
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Differential amplifier and
OP-AMP: Differential
amplifier
terms and terminologies, design and analysis of differential amplifier with BJT, JFET & MOSFET, differential and common-mode operations, Current mirror circuits and their role inside OP-AMP circuitry, Op-AMP: review of ideal and real characteristics of OP-AMP, case studies of OP-AMP 741 OP-AMP circuits – analog computation, logarithmic and anti-logarithm amplifier, precision rectifier, comparator, Schmitt trigger, voltage to frequency converter, instrumentation amplifier, voltage follower, active filter circuits, differentiator, integrator (10 marks). |
Unit-7
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Feedback and oscillator
circuits: Types
of feedback,
Feedback topologies, effect of feedback on amplifier performance; Barkhausen conditions for sustain oscillation, types of oscillator circuits – sinusoidal and non-sinusoidal oscillators; BJT based multivibrators, design of RC-phase-shift oscillator, Colpitt and Heartly oscillators with transistors and OP-AMP. Tune oscillators and crystal oscillators. Qualitative study of oscillator ICs, VCO & PLL ICs (10 marks). |
