Semiconductor Device Fabrication Technology Detailed Syllabus form Gauhati University

Semiconductor Device Fabrication Technology , 2nd semester. MSc Electronics Detailed Syllabus under Gauhati University



A) Semiconductor Device Fabrication Technology (30marks)
Unit-1
Thin Film: Basic definitions- thin and thick films, properties of thin films,
thin film deposition methods- PVD, CVD, Epitaxy theory of nucleation
and growth in thin films; VPE, LPE, MOCVD, MBE techniques 
Growth of multilayer structure, defects; diffusion, method of control and 
measurement of film thickness, structure, optical, electrical and mechanical 
characterization of thin films metallic, semi conducting and insulating films; 
non crystalline films; various applications of thin films. (10 marks)

Unit-2
IC Processing: Introduction to I.C s – Definition, scale of 
integration, types-monolithic, hybrid, thick & thin films; capacitance
 & resistance formation in ICs , idea of fabrication (silicon planar technology)
. Fabrication of diode, BJT, FET & MOSFET in ICs; Bulk
 semiconductor growth: zone refining technique Czochralski growth,
 vertical and horizontal Bridgman technique. Wafer preparation, 
oxidation, diffusion, ion implantation, metallization, pattern 
definition, encapsulation, lithography: advanced processing
 technique, electron beam lithography, soft x-ray lithography
 various types of etching plasma etching (10 marks)
Unit
 
-3
Fundamentals of low dimensional semiconductor structures:
Moore’s law: Transition from microelectronics to nanoelectronics,
 low dimensional semiconductor structures-quantum well, quantum
 wire, quantum dots, electron transport in nanostructures, metal 
nanoparticles. Synthesis & characterization of nanomaterials: 
 Template-based synthesis, Lithographic techniques, Nonlithographic 
techniques. Chemical Characterization & Structural Characterization.
 Carbon Nanotubes (CNTs) & Graphene, application of nanomaterial (10 marks)
 
 
B) Linear Electronic Circuits (70 marks)
Unit -1
Diode circuits: Review of pn diode junction operation, diode
 testing with multimeter, diode specifications; diode biasing, load 
line analysis, series and parallel connection of diodes, rectifier
 circuits & zener diode based voltage regulator, clipper and 
clamper circuits, voltage multiplier circuits; Logic gates design 
with diodes (10 marks).
Unit -2
BJT circuits: Review of BJT operation and, BJT testing with
 multimeter, BJT specifications; BJT biasing techniques, Q-point 
and stability factor; BJT modeling: re -model, h-parameter model,
 hybrid p-model; small signal analysis of BJT amplifiers at low
 and high frequencies – determination of input impedance, voltage gain, 
current gain and output impedance of BJT amplifiers in CE, CB 
and CC configurations; Darlington pair and feedback pair BJT
 amplifiers; multistage BJT amplifiers, tune amplifiers. Switching 
circuits and logic gate design with BJT (10 marks).
Unit-3
JFET and MOSFET circuits: Review of JFET & 
MOSFET operation, device specifications; JFET & MOSFET
 biasing techniques and biasing techniques; Transconductance
 model of JFET and MOSFET; small signal analysis of 
JFET & MOSFET amplifiers at low and high frequencies
 – determination of input impedance, voltage gain, current 
gain and output impedance of the amplifiers in CS, CG
 and CD configurations; multistage JFET & MOSFET 
amplifiers. Basics of switching circuits design with JFET 
and MOSFET (10 marks).
Unit-4
Frequency response of amplifiers: Amplifier gain in Decibels,
 frequency response plots – magnitude response and 
phase response, -3dB amplifier bandwidth determination from 
Bode plots, gain-band width product, square wave testing of 
amplifiers; comparison between performance of BJT, JFET and 
MOSFET amplifiers at high
 frequencies; gain cross over and phase crossover frequency,
 transfer function of amplifier – location of poles and zeros, 
stability criterion (10 marks).
Unit-5
Power amplifiers: Classification of power amplifiers; design 
and analysis of class A, B, AB, C amplifiers – determination
 of conversion efficiency, signal distortions in power amplifier; 
heat sink requirement and power transistor specifications; 
Qualitative study of class  D, E & F amplifiers. Case study 
of commercially available power amplifier ICs for audio
 and RF applications (10 marks).
Unit-6
Differential amplifier and OP-AMP: Differential amplifier 
terms and terminologies, design and analysis of differential
 amplifier with BJT, JFET & MOSFET, differential and 
common-mode operations, Current mirror circuits and their 
role inside OP-AMP circuitry, Op-AMP: review of ideal and
real characteristics of OP-AMP, case studies of OP-AMP 741
OP-AMP circuits – analog computation, logarithmic and 
anti-logarithm amplifier, precision rectifier, comparator, 
Schmitt trigger, voltage to frequency converter, instrumentation
 amplifier, voltage follower, active filter circuits, 
differentiator, integrator (10 marks).
Unit-7
Feedback and oscillator circuits: Types of feedback, 
Feedback topologies, effect of feedback on amplifier performance;
 Barkhausen conditions for sustain oscillation, types of oscillator
 circuits – sinusoidal and non-sinusoidal oscillators; BJT
 based multivibrators, design of RC-phase-shift oscillator, 
Colpitt and Heartly oscillators with transistors and 
OP-AMP. Tune oscillators and crystal oscillators. 
Qualitative study of oscillator ICs, VCO & PLL  ICs (10 marks).

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