Applied Quantum Mechanics and Semi Conductor Devices
1st sem MSc Electronics & Telecommunication Tech, Gauhati University Detail Syllabus
1st sem MSc Electronics & Telecommunication Tech, Gauhati University Detail Syllabus
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A) Applied Quantum mechanics (50
marks)
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Historical
Developments of Quantum mechanics (QM), importance of QM in Electronics.
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Experimental
verification of de Broglie hypothesis, concept of wave packet and wave function,
uncertainty principle and its applications (5 marks).
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Schrödinger
wave equation, probability density current, Free electrons, 1D &
3D space, electrons confined to a bounded region of space: 1D and 3D rigid
potential box, quantum confinement, degenerate and non-degenerate energy
levels; Transmission and reflection of unbounded states: potential step and
impedance matching (15 marks)..
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Particle
tunneling, Tunnel diode, electron tunneling limit to reduction in size of
CMOS transistor, concept of resonant tunneling, double barrier resonant
tunneling diode, heterostructure bipolar transistor with resonant tunnel – barrier
(15 marks)..
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Electrons
subject to periodic potential: Band theory of solids, concept of effective
mass & holes; Density of states (DOS) in bulk semiconductor, brief idea
of DOS in low dimensional semiconductor structure, concept of quantum
conductance (15 marks)..
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B) Semiconductor Devices (50 marks)
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Semiconductors: Direct and indirect
semiconductors, energy bands in intrinsic and extrinsic semiconductors, law
of mass action; density of states, Fermi Dirac distribution function, carrier
statistics; carrier transport phenomena – drift and diffusion currents, Einstein’s
relationship, carrier scattering, generation and recombination processes (10 marks) .
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Junction diodes: Homojunctions and hetero-junctions,
device structure of junction diode, different doping profiles of pn-junction;
Energy band diagram of pn-juction diode, built-in potential and depletion width
of uniformly doped step and one sided junction under thermal equilibrium and
biased conditions, diode equation, I-V characteristics of diode and thermal
effect, breakdown mechanisms in junction diodes; operation of Zener diode,
tunnel diode, Schottky diode, varactor diode, basics of light emitting diodes
and photodiodes. Diode circuits: equivalent models of diode, AC & DC
circuits containing diodes – rectifier
circuits, DC voltage regulator, clipping and clamping circuits. Switching
response of signal diodes and power diodes, study of diode datasheets (10 marks).
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Bipolar Junction Transistor: Device structure of pnp and npn
transistors, detailed analysis of current flow in BJT, I-V characteristic
curves for BJT in CE, CB and CC configurations, determination of h-parameters from I-V curves, small
signal equivalent circuit of BJT, leakage current, base-width modulation,
breakdown phenomena, thermal effects; a & b cut off frequencies, basics of phototransistor
and hetero-junction BJT. Basic BJT circuits: DC load line & bias point, biasing
schemes – fixed current bias,
collector to base bias, emitter current bias, potential divider bias; Bias stability
factor; basic BJT circuits for signal amplification, frequency response of
BJT amplifiers, study of BJT datasheets (10
marks).
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Field Effect Transistors -JFET
and MOSFET physics:
Device structure of n-channel and p-channel Junction Field Effect Transistor
(JFET); detailed analysis of current flow, linear and saturation
regions of I-V characteristics, pinch off voltage, equation of drain current,
channel length modulation. Device structure of n-channel and p-channel Metal
Oxide Semiconductor Field Effect Transistor (MOSFET), enhancement and
depletion type MOSFETs; detailed analysis of current flow, channel
accumulation and inversion states, threshold voltage, sub-threshold, linear
and saturation regions of I-V characteristics, channel length modulation,
channel pinch off, equation of drain current; Basic JFET & MOSFET
circuits: DC load line & bias point, biasing schemes, basic circuits for
signal amplification, small signal AC equivalent circuits of JFET and MOSFET,
frequency response of MOSFET/JFET amplifiers, Study of JFET & MOSFET
datasheets (10 marks).
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Basics of negative and positive
feedback in amplifier:
General theory of positive and negative feedback, Barkhausen criterion; Open
loop and close loop gain, negative Feedback topologies and their effects on
amplifier characteristics, positive feedback in oscillator circuits (5 marks).
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Basics of operational amplifier
(OP-AMP): Ideal
and real characteristics of OP-AMP; internal building blocks of OP-AMP,
comparison between BJT and FET based OP-AMPs; frequency response and gain of
OP-AMP in open loop and closed loop, frequency compensation in OP-AMP; Basic
OP-AMP circuits: non inverting & inverting amplifiers, comparators,
adder, subtractor, log amplifier and oscillator circuits, active filters
using OP-AMP, OP-AMP datasheets(5
marks).
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