Applied Quantum Mechanics and Semi Conductor Devices Syllabus

Applied Quantum Mechanics and Semi Conductor Devices
1st sem MSc Electronics & Telecommunication Tech, Gauhati University Detail Syllabus


A) Applied Quantum mechanics (50 marks)
Historical Developments of Quantum mechanics (QM), importance of QM in Electronics.

Experimental verification of de Broglie hypothesis, concept of wave packet and wave function, uncertainty principle and its applications (5 marks).

Schrödinger wave equation, probability density current, Free electrons, 1D & 3D space, electrons confined to a bounded region of space: 1D and 3D rigid potential box, quantum confinement, degenerate and non-degenerate energy levels; Transmission and reflection of unbounded states: potential step and impedance matching (15 marks)..

Particle tunneling, Tunnel diode, electron tunneling limit to reduction in size of CMOS transistor, concept of resonant tunneling, double barrier resonant tunneling diode, heterostructure bipolar transistor with resonant tunnel – barrier (15 marks)..

Electrons subject to periodic potential: Band theory of solids, concept of effective mass & holes; Density of states (DOS) in bulk semiconductor, brief idea of DOS in low dimensional semiconductor structure, concept of quantum conductance (15 marks)..

B) Semiconductor Devices (50 marks)
Semiconductors: Direct and indirect semiconductors, energy bands in intrinsic and extrinsic semiconductors, law of mass action; density of states, Fermi Dirac distribution function, carrier statistics; carrier transport phenomena – drift and diffusion currents, Einstein’s relationship, carrier scattering, generation and recombination processes (10 marks) .

Junction diodes: Homojunctions and hetero-junctions, device structure of junction diode, different doping profiles of pn-junction; Energy band diagram of pn-juction diode, built-in potential and depletion width of uniformly doped step and one sided junction under thermal equilibrium and biased conditions, diode equation, I-V characteristics of diode and thermal effect, breakdown mechanisms in junction diodes; operation of Zener diode, tunnel diode, Schottky diode, varactor diode, basics of light emitting diodes and photodiodes. Diode circuits: equivalent models of diode, AC & DC circuits containing diodes – rectifier circuits, DC voltage regulator, clipping and clamping circuits. Switching response of signal diodes and power diodes, study of diode datasheets (10 marks).

Bipolar Junction Transistor: Device structure of pnp and npn transistors, detailed analysis of current flow in BJT, I-V characteristic curves for BJT in CE, CB and CC configurations, determination of h-parameters from I-V curves, small signal equivalent circuit of BJT, leakage current, base-width modulation, breakdown phenomena, thermal effects; a & b cut off frequencies, basics of phototransistor and hetero-junction BJT. Basic BJT circuits: DC load line & bias point, biasing schemes – fixed current   bias, collector to base bias, emitter current bias, potential divider bias; Bias stability factor; basic BJT circuits for signal amplification, frequency response of BJT amplifiers, study of BJT datasheets (10 marks).

Field Effect Transistors -JFET and MOSFET physics: Device structure of n-channel and p-channel Junction Field Effect Transistor (JFET); detailed analysis of current flow, linear and saturation regions of I-V characteristics, pinch off voltage, equation of drain current, channel length modulation. Device structure of n-channel and p-channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET), enhancement and depletion type MOSFETs; detailed analysis of current flow, channel accumulation and inversion states, threshold voltage, sub-threshold, linear and saturation regions of I-V characteristics, channel length modulation, channel pinch off, equation of drain current; Basic JFET & MOSFET circuits: DC load line & bias point, biasing schemes, basic circuits for signal amplification, small signal AC equivalent circuits of JFET and MOSFET, frequency response of MOSFET/JFET amplifiers, Study of JFET & MOSFET datasheets (10 marks).

Basics of negative and positive feedback in amplifier: General theory of positive and negative feedback, Barkhausen criterion; Open loop and close loop gain, negative Feedback topologies and their effects on amplifier characteristics, positive feedback in oscillator circuits (5 marks).

Basics of operational amplifier (OP-AMP): Ideal and real characteristics of OP-AMP; internal building blocks of OP-AMP, comparison between BJT and FET based OP-AMPs; frequency response and gain of OP-AMP in open loop and closed loop, frequency compensation in OP-AMP; Basic OP-AMP circuits: non inverting & inverting amplifiers, comparators, adder, subtractor, log amplifier and oscillator circuits, active filters using OP-AMP, OP-AMP datasheets(5 marks).

Location: Guwahati, Assam, India

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